FS8205A Dual N-Channel Power MOSFET - TSSOP-8 SMD Package
The FS8205A is a dual N-channel enhancement mode Power MOSFET designed for high-efficiency power management in battery-operated devices. It integrates two identical MOSFETs in a single TSSOP-8 surface-mount package, making it ideal for applications requiring compact layout and low on-resistance. The device supports fast switching and high current handling, commonly used in battery protection circuits and load switches.
Features of FS8205A Dual N-Channel MOSFET:
- Dual N-channel MOSFETs integrated in one package
- Ultra-low RDS(on) for reduced conduction losses
- Fast switching performance
- Suitable for battery protection circuits and DC-DC converters
- Compact TSSOP-8 package ideal for space-constrained applications
Specifications of FS8205A Dual N-Channel MOSFET:
- Model: FS8205A
- Type: Dual N-Channel Power MOSFET
- Drain-Source Voltage (VDS): 30V
- Continuous Drain Current (ID): 6A (per channel)
- Gate Threshold Voltage (VGS(th)): 1V to 2.5V
- RDS(on): 0.025Ω (typical) at VGS = 4.5V
- Package: TSSOP-8 – SMD
- Total Power Dissipation: 1.2W
- Operating Temperature Range: -55°C to +150°C
Package Includes:
1 × FS8205A Dual N-Channel Power MOSFET – TSSOP-8 Package
FS8205A Dual N-Channel Power MOSFET - TSSOP-8 SMD Package
The FS8205A is a dual N-channel enhancement mode Power MOSFET designed for high-efficiency power management in battery-operated devices. It integrates two identical MOSFETs in a single TSSOP-8 surface-mount package, making it ideal for applications requiring compact layout and low on-resistance. The device supports fast switching and high current handling, commonly used in battery protection circuits and load switches.
Features of FS8205A Dual N-Channel MOSFET:
- Dual N-channel MOSFETs integrated in one package
- Ultra-low RDS(on) for reduced conduction losses
- Fast switching performance
- Suitable for battery protection circuits and DC-DC converters
- Compact TSSOP-8 package ideal for space-constrained applications
Specifications of FS8205A Dual N-Channel MOSFET:
- Model: FS8205A
- Type: Dual N-Channel Power MOSFET
- Drain-Source Voltage (VDS): 30V
- Continuous Drain Current (ID): 6A (per channel)
- Gate Threshold Voltage (VGS(th)): 1V to 2.5V
- RDS(on): 0.025Ω (typical) at VGS = 4.5V
- Package: TSSOP-8 – SMD
- Total Power Dissipation: 1.2W
- Operating Temperature Range: -55°C to +150°C
Package Includes:
1 × FS8205A Dual N-Channel Power MOSFET – TSSOP-8 Package
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
The FS8205A is a dual N-channel enhancement mode Power MOSFET designed for high-efficiency power management in battery-operated devices. It integrates two identical MOSFETs in a single TSSOP-8 surface-mount package, making it ideal for applications requiring compact layout and low on-resistance. The device supports fast switching and high current handling, commonly used in battery protection circuits and load switches.
Features of FS8205A Dual N-Channel MOSFET:
- Dual N-channel MOSFETs integrated in one package
- Ultra-low RDS(on) for reduced conduction losses
- Fast switching performance
- Suitable for battery protection circuits and DC-DC converters
- Compact TSSOP-8 package ideal for space-constrained applications
Specifications of FS8205A Dual N-Channel MOSFET:
- Model: FS8205A
- Type: Dual N-Channel Power MOSFET
- Drain-Source Voltage (VDS): 30V
- Continuous Drain Current (ID): 6A (per channel)
- Gate Threshold Voltage (VGS(th)): 1V to 2.5V
- RDS(on): 0.025Ω (typical) at VGS = 4.5V
- Package: TSSOP-8 – SMD
- Total Power Dissipation: 1.2W
- Operating Temperature Range: -55°C to +150°C
Package Includes:
1 × FS8205A Dual N-Channel Power MOSFET – TSSOP-8 Package
