MMBTA42 NPN Transistor – SOT23
The MMBTA42 is a high-voltage NPN bipolar junction transistor (BJT) designed for a wide range of electronic applications. Housed in the compact SOT23 package, this transistor provides excellent electrical characteristics, making it suitable for high-voltage switching and signal amplification.
Features
- Transistor Type: NPN
- Material: Silicon
- Package Type: SOT23
- High Voltage Capability: Suitable for high-voltage applications
- Low Saturation Voltage: Enhances efficiency in switching applications
- Fast Switching Speed: Ideal for high-frequency operations
- Robust and Reliable: Offers long-term stability and durability
Specifications
- Collector-Emitter Voltage (Vce): 300V
- Collector-Base Voltage (Vcb): 300V
- Emitter-Base Voltage (Veb): 6V
- Collector Current (Ic): 500mA
- Power Dissipation (Pd): 625mW
- DC Current Gain (hFE): 40-160 at Ic = 10mA
Package Includes:
1 x MMBTA42 Transistor – SOT23
Original: $0.06
-67%$0.06
$0.02MMBTA42 NPN Transistor – SOT23
The MMBTA42 is a high-voltage NPN bipolar junction transistor (BJT) designed for a wide range of electronic applications. Housed in the compact SOT23 package, this transistor provides excellent electrical characteristics, making it suitable for high-voltage switching and signal amplification.
Features
- Transistor Type: NPN
- Material: Silicon
- Package Type: SOT23
- High Voltage Capability: Suitable for high-voltage applications
- Low Saturation Voltage: Enhances efficiency in switching applications
- Fast Switching Speed: Ideal for high-frequency operations
- Robust and Reliable: Offers long-term stability and durability
Specifications
- Collector-Emitter Voltage (Vce): 300V
- Collector-Base Voltage (Vcb): 300V
- Emitter-Base Voltage (Veb): 6V
- Collector Current (Ic): 500mA
- Power Dissipation (Pd): 625mW
- DC Current Gain (hFE): 40-160 at Ic = 10mA
Package Includes:
1 x MMBTA42 Transistor – SOT23
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
The MMBTA42 is a high-voltage NPN bipolar junction transistor (BJT) designed for a wide range of electronic applications. Housed in the compact SOT23 package, this transistor provides excellent electrical characteristics, making it suitable for high-voltage switching and signal amplification.
Features
- Transistor Type: NPN
- Material: Silicon
- Package Type: SOT23
- High Voltage Capability: Suitable for high-voltage applications
- Low Saturation Voltage: Enhances efficiency in switching applications
- Fast Switching Speed: Ideal for high-frequency operations
- Robust and Reliable: Offers long-term stability and durability
Specifications
- Collector-Emitter Voltage (Vce): 300V
- Collector-Base Voltage (Vcb): 300V
- Emitter-Base Voltage (Veb): 6V
- Collector Current (Ic): 500mA
- Power Dissipation (Pd): 625mW
- DC Current Gain (hFE): 40-160 at Ic = 10mA
Package Includes:
1 x MMBTA42 Transistor – SOT23
